科通芯城，IC及其他电子元器件交易型电商平台100%正品保证！

Description
The W9712G6JB is a128M bits DDR2 SDRAM and speed involving -18, -25, 25I, 25A and -3 Status: Mass Production
Features
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK )
Data masks (DM) for write data.
Commands entered on each positive CLK edge, data and data mask are referenced to both edgesof DQS
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL=AL+CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency-1(WL=RL-1)
Interface: SSTL_18