| 参数 | 数值 |
|---|---|
| Package | 6L 3x3 DFN |
| Operating Frequency (MHz) | 10-4000 |
| # Throws | SPDT |
| IIP3 (dBm @ 2 GHz) | 55 |
| Insertion Loss (dB @ 1 GHz) | 0.35 |
| Isolation (dB @ 1 GHz) | 43 |
| P1dB (dBm @ 2 GHz) | 32 |
| Typical Idd μA @ 3V | 29 |
| Vdd Range (V) | 2.7-3.3 |
The PE4237 SPDT Switch is designed to cover a broad range of applications from 10 MHz through 4.0 GHz. This reflective switch integrates on-board CMOS control logic driven by a single-pin, low voltage CMOS or TTL control input. Using a nominal +3-volt power supply, a 1 dB compression point of +32 dBm can be achieved. The PE4237 also exhibits excellent isolation of better than 43 dB at 1.0 GHz and is offered in a small 6-lead 3x3mm DFN package.
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Product Information
| 序号 | 描述 | |
|---|---|---|
| 1 | 文档(Document) | |
| 2 | 文档(Document) |
Evaluation Kit Documentation
| 序号 | 描述 | |
|---|---|---|
| 1 | 文档(Document) |
Package Information
| 序号 | 描述 | |
|---|---|---|
| 1 | 文档(Document) |
Application Notes
| 序号 | 描述 | |
|---|---|---|
| 1 | AN18 Performance Benefits of UTSi CMOS RF Switch Technology Compared to GaAs Based RF Switches | AN18 Performance Benefits of UTSi CMOS RF Switch Technology Compared to GaAs Based RF Switches |
| 2 | AN27 Using Blocking Capacitors with UltraCMOS� Devices | AN27 Using Blocking Capacitors with UltraCMOS� Devices |
