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High-performance 1-megabit EEPROM offers access times to 120ns with power dissipation of 220 m ( 440mW military). Deselected, CMOS standby current is less than 200μA (300μA military). It is accessed like static RAM for the read or write cycle without external components. It contains a 128-byte page register to allow writing of up to 128bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.