W19B160B
- 品牌：Winbond
- 包装：--
- 无铅情况/ROHS: 无铅
- 经营商：科通芯城自营
- 描述：The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M?x 8 or 1M?x 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (x 16) da
- 封装：TSOP48/-
- 类别：并行FLASH
| 参数 | 数值 |
|---|---|
| Voltage | 3V/3.3V |
| Package | TSOP48/- |
| Status | EOL |
| Density | 16Mbit |
| comment | Obsolete |
| Organization | 2M x 8/1M x 16 |
| Remark | Single Bank |
| RoHS | Y |
| Speed | 70ns |
| Temp | -40 to +85 |
Description
The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M?x 8 or 1M?x 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (x 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7?DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B160B results in fast program/erase operations with extremely low current consumption. The device can also be programmed and erased by using standard EPROM programmers.
Features
Manufactured on WinStack-S 0.13um process technology
Operating Voltage: 3.0V (2.7V-3.6V)
Organization: 2Mbx8 / 1Mbx16
Speed: 70ns
Boot Block: Top / Bottom
Secured Silicon Sector (256 Byte)
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