W19B320A
- 品牌：Winbond
- 包装：--
- 无铅情况/ROHS: 无铅
- 经营商：科通芯城自营
- 描述：The W19B320AT/B is a 32Mbit, 2.7~3.6-volt flexible bank CMOS flash memory organized as 4M x 8 or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7-DQ0. The device can be programmed and erased in-system wi
- 封装：TSOP48/-
- 类别：并行FLASH
| 参数 | 数值 |
|---|---|
| Voltage | 3V/3.3V |
| Package | TSOP48/- |
| Status | EOL |
| Density | 32Mbit |
| comment | Obsolete |
| Organization | 4M x 8/2M x 16 |
| Remark | Flexible Bank |
| RoHS | Y |
| Speed | 70ns |
| Temp | -20 to +85 |
Description
The W19B320AT/B is a 32Mbit, 2.7~3.6-volt flexible bank CMOS flash memory organized as 4M x 8 or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B320AT/B results in fast program/erase operations with extremely low current consumption (compared to other comparable 3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.
Features
Manufactured on WinStack-S 0.18um process technology
Operating Voltage: 3.0V (2.7V-3.6V)
Organization: 4Mbx8 / 2Mbx16
Speed: 70ns
Simultaneous Read/Write (Flexible bank)?
Boot Block: Top & Bottom
Flex Bank: 4Mb / 12 Mb / 12Mb / 4Mb? ??????Bank1: 8x8KB/4Kw+7x64KB/32Kw ??????Bank2: 24x64KB/32Kw? ??????Bank3: 24x64KB/32Kw? ??????Bank4: 8x64KB/Kw
Secured Silicon Sector (256 Byte)
Available packages: 48-pin TSOP and 48-ball TFBGA (6x8mm)
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