| 参数 | 数值 |
|---|---|
| Voltage | 3V/3.3V |
| Package | TSOP 56?/LFBGA 64?/TSOP 48/TFBGA 48 |
| Status | S |
| Density | 32Mbit |
| comment | Samples Available |
| Organization | 4M x 8/2M x 16 |
| Remark | Top Boot Bottom Boot High Sector Low Sector |
| RoHS | Y |
| Speed | 70ns |
| Temp | -40 to +85 |
Description
32M-bit 3 Volt Parallel Flash Memory with Page Mode
Features
32k-Word/64k-Byte uniform sector architecture
16-Word/32-Byte write buffer
8-word/16-Byte page read buffer
Secured Silicon Sector area
Enhanced Sector Protect using Dynamic and Individual mechanisms?
Polling/Toggling methods are used to detect the status of program and erase operation
Suspend and resume commands used for program and erase operations
More than 100,000 erase/program cycles
More than 20-year data retention
Low power consumption
Deep power down mode
Wide temperature ranges
Compatible manufacturer ID for drop-in?replacement
Faster Erase and Program time
CFI(Common Flash Interface) support
Single 3V Read/Program/Erase(2.7 - 3.6V)
Enhanced Variable IO control
#WP/ACC Input
Ready/#Busy output(RY/#BY)detects completion of program or erase cycle
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