W9412G6JB
- 品牌：Winbond
- 包装：--
- 无铅情况/ROHS: 无铅
- 经营商：科通芯城自营
- 描述：The W9412G6JB is a 128M DDR SDRAM and speed involving -4 and -5/-5I
- 封装：Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant
- 类别：利基动态随机存取内存
| 参数 | 数值 |
|---|---|
| Voltage | 2.5V±0.2V |
| Package | Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant |
| Status | P |
| Organization | 8Mbitx16/4 Banks |
| RoHS | Y |
| Speed Grade | CL3//-5/200 MHz |
Description
The W9412G6JB is a 128M DDR SDRAM and speed involving -4 and -5/-5I Status: Not recommended for new design.
Features
2.5V ±0.2V Power Supply for DDR400
2.5V ~ 2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6μS refresh interval (4K/64 mS Refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
