W9864G6IH
- 品牌：Winbond
- 包装：--
- 无铅情况/ROHS: 无铅
- 经营商：科通芯城自营
- 描述：The W9864G6IH is a 64M SDRAM and speed involving -5/-6/-6I/-6A/-7/-7S
- 封装：Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
- 类别：利基动态随机存取内存
| 参数 | 数值 |
|---|---|
| Voltage | 2.7V~3.6V |
| Voltage | 3.3V±0.3V |
| Package | Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant |
| Status | NRFND |
| Organization | 4Mbit x16/4 Banks |
| RoHS | Y |
| Speed Grade | CL3//-5/200 MHz |
| Speed Grade | CL3//-6/-6I/-6A/166 MHz |
| Speed Grade | CL3//-7/-7S/143 MHz |
| Organization | 4Mbit x16 |
| Voltage | 3.3V±0.3V |
| Speed | -5_200MHz_CL3 |
| Package | Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant |
| Status | NRFND |
| RoHS | Y |
Description
The W9864G6IH is a 64M SDRAM and speed involving -5/-6/-6I/-6A/-7/-7S Status: Not recommended for new design.
Features
3.3V± 0.3V for -5/-6/-6I/-6A grade power supply
2.7V~3.6V for -7/-7S grade power supply
1,048,576 words x 4 banks x 16 bits organization
Self Refresh Current: Standard and Low Power
CAS Latency: 2 & 3
Burst Length: 1, 2, 4, 8 and full page
Sequential and Interleave Burst
Byte data controlled by LDQM, UDQM
Auto-precharge and controlled precharge
Burst read, single write operation
4K refresh cycles/64 mS
Interface: LVTTL
文档类型：
文档(document)文档(document)
| 序号 | 描述 | |
|---|---|---|
| 1 | 文档(Document) |
