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W9725G6JB

W9725G6JB

  • 品牌:Winbond
  • 包装:--
  • 无铅情况/ROHS: 无铅
  • 经营商:科通芯城自营
  • 描述:The W9725G6JB is a 256M bits DDR2 SDRAM, and speed involving -18, -25, 25I, 25A, 25K?and -3
  • 封装:WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
  • 类别:利基动态随机存取内存
参数 数值
Voltage 1.8V±0.1V
Package WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
Status P
CL-tRCD-tRP 5-5-5
CL-tRCD-tRP 5-5-5/6-6-6
CL-tRCD-tRP 7-7-7
Organization 16Mbitx16/4 Banks
RoHS Y
Speed Grade DDR2-1066//-18
Speed Grade DDR2-667//-3
Speed Grade DDR2-800//-25/ 25I/25A/25K

Description
The W9725G6JB is a 256M bits DDR2 SDRAM, and speed involving -18, -25, 25I, 25A, 25K?and -3 Status: Mass Production
Features
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18

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