W9425G6JH
- 品牌：Winbond
- 包装：--
- 无铅情况/ROHS: 无铅
- 经营商：科通芯城自营
- 描述：The W9425G6JH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A
- 封装：Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
- 类别：利基动态随机存取内存
| 参数 | 数值 |
|---|---|
| Voltage | 2.4V~2.7V |
| Voltage | 2.5V ±0.2V |
| Package | Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
| Status | P |
| Organization | 16Mbitx16/4 Banks |
| RoHS | Y |
| Speed Grade | CL3//-5/-5I/-5A/200 MHz |
| Speed Grade | CL3/CL4//-4/250 MHz |
| Organization | 16Mbitx16 |
| Voltage | 2.4V~2.7V 2.5V ±0.2V |
| Speed | -4_250MHz_CL3/CL4, -5/-5I_200MHz_CL3 |
| Package | Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
| Status | P |
| RoHS | Y |
Description
The W9425G6JH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A Status: Mass Production
Features
2.5V ±0.2V Power Supply for DDR400
2.4V~2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4 ?
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
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