科通芯城，IC及其他电子元器件交易型电商平台100%正品保证！

Description
The W971GG8JB is a 1G bits DDR2 SDRAM, and speed involving -18, -25, 25I and -3. Status: Mass Production
Features
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7? Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock? Differential clock inputs (CLK and /CLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS Posted /CAS programmable additive latency supported to make command and data bus efficiency Read Latency = Additive Latency plus CAS Latency (RL = AL + CL) Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality Auto-precharge operation for read and write bursts? Auto Refresh and Self Refresh modes Precharged Power Down and Active Power Down? Write Data Mask Write Latency = Read Latency - 1 (WL = RL - 1) Interface: SSTL_18