品牌介绍
成立时间1987年 公司总部位于台湾 全球员工数量约1,800名 总资本额365.65亿 1995年于台湾证券交易所上市，代号2344 Winbond的串行Flash出货量达20亿颗 2011年Pseudo SRAM产品供货商中，Winbond排名第二 2011年NOR Flash产品供货商中，Winbond排名第六
主打产品系列
DRAM——利基型DRAM、显示型DRAM
Flash——并行、串行
应用领域
汽车电子
手机
电脑
网络通讯设备
无线网络
家电
| 型号 | Speed Grade | Voltage | CL-tRCD-tRP | Package | Organization | Status |
|---|---|---|---|---|---|---|
| W9412G6JB | CL3//-5/200 MHz | 2.5V±0.2V | Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant | 8Mbitx16/4 Banks | P | |
| W9412G6JH | CL3/CL4//-4/250 MHz | 2.5V±0.2V | Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant | 8Mbitx16/4 Banks | P | |
| W9464G6IH | CL3/CL4//-4/250 MHz | 2.6V±0.1V | Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant | 4Mbitx16/4 Banks | NRFND | |
| W9464G6JH | CL3/CL4//-4/250 MHz | 2.5V±0.2V | Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant | 4Mbitx16/4 Banks | P | |
| W9712G6JB | DDR2-800//-25/25I/25A | 1.8V±0.1V | 7-7-7 | WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant | 8Mbitx16/4 Banks | P |
| W9712G8JB | DDR2-800//-25 | 1.8V±0.1V | 7-7-7 | WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant | 16Mbitx8/4 Banks | P |
| W971GG8JB | DDR2-800//-25/25I | 1.8V±0.1V | 6-6-6 | WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant | 128Mbitx8/8 Banks | P |
| W9725G2JB | DDR2-800//-25 | 1.8V±0.1V | 5-5-5/6-6-6 | TFBGA 128 Ball (10.5X13.5 mm2), using Lead free materials with RoHS compliant | 8Mbitx32/4 Banks | P |
| W9725G6JB | DDR2-800//-25/ 25I/25A/25K | 1.8V±0.1V | 7-7-7 | WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant | 16Mbitx16/4 Banks | P |
| W9725G6KB | DDR2-800//-25/25I | 1.8V±0.1V | 7-7-7 | WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant | 16Mbitx16/4 Banks | P |
| W9725G8JB | DDR2-800//-25/25I | 1.8V±0.1V | 7-7-7 | WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant | 32Mbitx8/4 Banks | P |
| W9725G8KB | DDR2-800//-25 | 1.8V±0.1V | 7-7-7 | WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant | 32Mbitx8/4 Banks | P |
| W972GG6JB | DDR2-800//-25/25I | 1.8V±0.1V | 7-7-7 | WBGA 84 Ball (11x13mm2), using Lead free materials with RoHS compliant | 128Mbitx16/8 Banks | P |
| W972GG8JB | DDR2-800//-25/25I | 1.8V±0.1V | 7-7-7 | WBGA 60 Ball (11x11.5mm2), using Lead free materials with RoHS compliant | 256Mbitx8/8 Banks | P |
| W9751G6KB | DDR2-800//-25/25I | 1.8V±0.1V | 7-7-7 | WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant | 32Mbitx16/4 Banks | P |
| W9751G8KB | DDR2-800//-25/25I | 1.8V±0.1V | 7-7-7 | WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant | 64Mbitx8/4 Banks | P |
| W9812G6JB | CL3//-75/75I/133 MHz | 3.3V±0.3V | Packaged in TFBGA 54 Ball(8x8mm2 ), using Lead free materials with RoHS compliant | 8Mbit x16/4 Banks | P | |
| W9825G2JB | CL3//-75/75I/133 MHz | 3.3V±0.3V | 90 Balls TFBGA, using Lead free materials with ROHS compliant | 8Mbit x16/4 Banks | P | |
| W9825G6EH | CL3//-75/75I/75A/133 MHz | 3.3V±0.3V | Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant | 16Mbit x16/4 Banks | NRFND | |
| W9825G6JB | CL3//-75/133 MHz | 3.3V±0.3V | Packaged in TFBGA 54 Ball(8x8mm2), using Lead free materials with RoHS compliant | 16Mbit x16/4 Banks | P |
